Oxygen impurities are removed from a crucible-grown silicon wafer
摘要
Residual oxygen impurities are removed from crucible-grown silicon wafers by etching trenches (4) in the wafer back face (3), heating the wafer (1) to 1100 deg C in vacuum or a protective gas atmosphere, filling the trenches with heavily doped polysilicon and applying a metallization to the back face (3).
申请公布号
DE19740904(A1)
申请公布日期
1999.03.18
申请号
DE19971040904
申请日期
1997.09.17
申请人
SIEMENS AG, 80333 MUENCHEN, DE
发明人
STRACK, HELMUT, DR., 80804 MUENCHEN, DE;STENGL, PETER, 82284 GRAFRATH, DE
