| 摘要 |
<p>A thin film magneto-resistive device is formed by etching recesses in one major surface of a high temperature glass substrate so that the bottom of each recess is a predetermined distance from the other major surface of the substrate. The recesses and the one major surface are covered with a layer of permanent magnetic material so as to fill the recesses and the layer annealed. Thereafter, the thin film layer of NiFe is deposited and oriented. Finally, the excess permanent magnetic material is removed to leave permanent magnetic material in the recesses and form the device.</p> |
