发明名称 METHOD OF PRODUCING SEMICONDUCTOR CERAMIC HAVING POSITIVE TEMPERATURE COEFFICIENT
摘要 <p>A method of producing a semiconductor ceramic having a positive temperature coefficient by preparing a calcined material containing main composition of a barium titanate semiconductor containing BaTiO3 as a chief component and substantially not containing Si, preparing additive compositions of Ba2TiSi2O8 and BanTimOn+2m (1 ≤ n ≤ 4, 2 ≤ m ≤ 13, n &lt; m), mixing the calcined material of the main composition and the additive compositions together, and firing the mixture. The product has excellent electric properties which are little affected by the variation in the production conditions, and has a guaranteed stable quality.</p>
申请公布号 WO1999013479(P1) 申请公布日期 1999.03.18
申请号 JP1998003922 申请日期 1998.09.02
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