| 摘要 |
Hall effect sensor has an insulating aluminum oxide layer between its gallium arsenide (GaAs) or indium phosphide (InP) type III-V semiconductor substrate and its doped channel. An Independent claim is also included for production of Hall effect sensor by: (1) epitaxial growth, on substrate, of undoped III-V semiconductor layers, one of which has high aluminum content; (2) epitaxial growth of doped channel layer and a surface insulation layer; and (3) heating at 350-450 degrees C under an oxidizing atmosphere to convert the aluminum-rich layer into insulating aluminum oxide.
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