Method of making a bipolar transistor integrated circuit

摘要

In a semiconductor device (54) having trench-shaped element isolating regions (37) formed in a semiconductor body (21) and also a conductive layer (42) extending on each element isolating region (37) and connected to an impurity diffusion region (46) of the semiconductor body (21) there is formed an insulator layer region (34) between an extension of the conductive layer (42) and the element isolating region (37), and the insulator layer region (34) is buried in the surface portion of the semiconductor body (21).