摘要 |
An electrically erasable and programmable read only memory device unavoidably creates weak electric field between control electrodes and drain nodes of non-selected floating gate type field effect transistors connected to either selected word (W0) or bit line (B0) in an erasing/ programming operation; however, the direction of the electric field is changed during the erasing/ programming operation so as to prevent the non-selected floating gate type field effect transistors from disturbing phenomenon. <IMAGE>
|