Hemispherical grain silicon formation,申请号GB19980015646-传众专利搜索

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发明名称	Hemispherical grain silicon formation
摘要
申请公布号	GB2329279(A)	申请公布日期	1999.03.17
申请号	GB19980015646	申请日期	1998.07.17
申请人	* NEC CORPORATION	发明人	HIROHITO * WATANABE
分类号	H01L27/04;C23C16/24;C23C16/44;H01L21/02;H01L21/205;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L21/320;H01L21/824	主分类号	H01L27/04
代理机构		代理人
主权项
地址

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