| 摘要 |
PROBLEM TO BE SOLVED: To mount a semiconductor module on a dielectric substrate as it is after semiconductor chips are individually evaluated without deteriorating the performance of the module even in a millimetric wave range, by making the high-frequency performances of the chips seizable by extending conductor patterns to the peripheral section of the substrate from the sections of the substrate corresponding to the chips. SOLUTION: After a conductor pattern 11 is formed in the whole area of the carrier mounting main surface of a carrier 10, conductor pattern 11a, 11b, and 11c extended to the peripheral section of the carrier 10 are formed by patterning the pattern 11 by etching. Then, the patterns 11a, 11b, and 11c are aligned with electrode pads formed on one main surface of an MMIC chip 1, and the chip 1 is mounted on the carrier 10 by a flip chip mounting method. Therefore, the high-frequency performances of individual chips can be seized without deteriorating the performance of a module in a millimetric wave range, and, in addition, the size of the module can be reduced. |
