GALLIUM NITRIDE GROUP COMPOUND SEMICONDUCTOR ELEMENT AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To lower a contact resistor arising between a p-side electrode and a p-side contact layer, while low threshold value or low operation voltage does not cause degradation, but obtain improved reliability. SOLUTION: Relating to the GaN group semiconductor laser, an n-GaN contact layer 3, an n-AlGaN clad layer 4, a GaN waveguide layer 5, an MQW active layer 6, a GaN wave-guide layer 6, a p-AlGaN clad layer 8, and a p-GaN contact layer 9, each of which is single crystal, are grown on a sapphire substrate 1, and p-side electrodes 11 and 12 of Pt/Au are formed on a part of the contact layer 9, and a part of such range from the contact layer 9 to the clad layer 4 is etched, and, on an exposed contact layer 3, an n-side electrode 13 of Ti/Au is formed. Here, between the contact layer 9 and the p-side electrodes 11 and 12, a polycrystal GaN layer 10 wherein, being 10 nm or less in thickness, carrier concentration is 1×10<17> cm<-3> or more, is inserted.