| 摘要 |
PROBLEM TO BE SOLVED: To remarkably improve light emitting efficiency, reliability and responsibility, by specifying the conductivity type of an active layer (p) type, and setting its carrier concentration within a specified range. SOLUTION: A semiconductor light emitting element has a double hetero structure wherein an active layer 4 is sandwiched by a first conductivity type first clad layer 3 and second clad layer 5. As the conductivity type of the active layer 4 is (p) type, dopant is activated without increasing non-light emitting center concentration, and the carrier concentration can be increased. The light emitting efficiency can be improved by setting the carrier concentration of the p-type active layer 4 higher than 1×10<17> cm<3> , not exceeding 3×10<18> cm<3> . The concentration of a light emitting recombination center is not permitted to vary while electricity is carried, by setting the carrier concentration of the p-type active layer 4 in a range of 2×10<17> to 5×10<17> cm<3> , thereby improving the element reliability. |
