Ultra-thin MO-C film transistor

摘要

A transistor in accordance with the invention comprises an ultra-thin Mo-C film functioning as a channel for an electron flow with two ends of the thin metal film functioning as source and drain terminals of the transistor, respectively; a piezoelectric film formed on the Mo-C film, for producing a force in accordance with an applied electric field provided by a gate voltage; and an electrode film formed on the piezoelectric film functioning as a gate of the transistor to which the gate voltage is applied to produce the applied electric field; and wherein a resistance of the Mo-C film between the source and drain terminals changes in accordance with the force produced in response to the applied gate voltage. This transistor can be used as an element of the three dimensional integrated circuit with a laminated structure.