SEMICONDUCTOR MANUFACTURE AND MANUFACTURING DEVICE THEREFOR

摘要

PROBLEM TO BE SOLVED: To produce a GaN semiconductor crystal having few defects. SOLUTION: An H atom layer 12 for terminating dangling bonds on the major surface of a wafer 11 is formed by dipping the wafer 11, of which the face orientation is (111) surface and which is made of Si into hydrofluoric acid as a pre-processing of the wafer. After that the wafer is loaded into a high vacuum reaction vessel of an MBE device, and a buffer layer 13 made of GaSe which is a Van der Waals crystal body is grown on the H-atom layer 12 of the loaded wafer 12 by applying a Ga molecular beam and an Se molecular beam. Next, a semiconductor layer 14 made of GaN is grown on the buffer layer 13 of the wafer 11, by stopping the Se beam application and supplying activated N2 gas using high-frequency or electron cyclotron resonance in stead.