发明名称 |
Integrated circuit with differing gate oxide thickness and process for making same |
摘要 |
A semiconductor process for producing two gate oxide thicknesses within an integrated circuit in which a semiconductor substrate having a first region and a second region is provided. The first region and the second region are laterally displaced with respect to one another. A nitrogen species impurity distribution is then introduced into the first region of the semiconductor substrate. Thereafter, a gate dielectric layer is grown on an upper surface of the semiconductor substrate. The gate dielectric has a first thickness over the first region of the semiconductor substrate and a second thickness over the second region of the semiconductor substrate. The first thickness is less than the second thickness. In a CMOS embodiment of the present invention, the first region of the semiconductor substrate comprises p-type silicon while the second substrate region comprises n-type silicon. Preferably, the step of introducing the nitrogen species impurity distribution into the semiconductor substrate is accomplished by thermally oxidizing the first substrate region in a nitrogen bearing ambient. In a presently preferred embodiment, the nitrogen bearing ambient includes N2O, NH3, O2 and HCl in an approximate ratio of 60:30:7:3. In alternative embodiments the nitrogen bearing ambient includes NO, O2 and HCl in an approximate ratio of 90:7:3 or N2O, O2 and HCl in an approximate ratio of 90:7:3. The introduction of the nitrogen species impurity into first substrate region 102 may alternatively be accomplished with rapid thermal anneal processing.
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申请公布号 |
US5882993(A) |
申请公布日期 |
1999.03.16 |
申请号 |
US19960699249 |
申请日期 |
1996.08.19 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER, MARK I.;HAUSE, FRED N. |
分类号 |
H01L27/088;H01L21/316;H01L21/8238;H01L27/092;(IPC1-7):H01L21/44;H01L21/31 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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