发明名称 |
Method of manufacturing single crystal of silicon |
摘要 |
A single crystal of silicon is manufactured in accordance with the Czochralski method. A magnetic field is applied to a quartz crucible filled with silicon melt. Subsequently, a single crystal of silicon is pulled in a state in which no magnetic field is applied to the crucible, so as to obtain a single crystal of silicon. Therefore, the inner surface of a quartz crucible becomes very unlikely to deteriorate, and when the inner surface deteriorates, the deteriorated inner surface is restored. Accordingly, it is possible to manufacture a single crystal of silicon having a large diameter without generating a dislocation in the crystal. Moreover, even when a single crystal of silicon having a large diameter is manufactured, a larger number of single crystals of silicon can be manufactured from a single quartz crucible, and the pulling apparatus can be operated over a longer period of time using a single quartz crucible, thereby making it possible to manufacture a longer single crystal.
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申请公布号 |
US5882398(A) |
申请公布日期 |
1999.03.16 |
申请号 |
US19970786340 |
申请日期 |
1997.01.23 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
SONOKAWA, SUSUMU;HAYASHI, TOSHIRO;IWASAKI, ATSUSHI;OHTA, TOMOHIKO |
分类号 |
C30B15/00;C30B15/10;C30B15/30;C30B29/06;H01L21/208;(IPC1-7):C30B15/22 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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