| 摘要 |
PROBLEM TO BE SOLVED: To enhance reliability of the electrical connection between a capacitor electrode and a MOSFET by a method wherein sidewall conductor layers formed on the side surfaces of a storage node pattern comprising a polysilicon plug layer for conductor use, a first diffusion preventive layer, a lower electrode layer and a ferroelectric layer, which are formed in order on first conductor layers and an insulating layer, and the side surfaces of the storage node pattern are covered with a second diffusion preventive layer. SOLUTION: This ferroelectric capacitor has a storage node pattern which is constituted of polysilicon layers of the form of plugs 206, which are respectively connected with the source and drain of a MOSFET, and a polysilicon plug layer 210 for conductor use, a diffusion preventive layer (or beryllia metal layer) 220, a lower ellectrode layer 230 and a ferroelectric layer 250, which are formed in order on the upper parts of the polysilicon layers and an insulating layer, while sidewall conductor spacers 240, which are coupled electrically with the conductor of the storage node pattern on the sidewalls thereof, are formed. In this ferroelectric capacitor, diffusion preventive insulating layers 270 are respectively formed on the upper parts of the spacers 240 and the side surfaces and upper edge parts of the storage node pattern. |
