| 摘要 |
PROBLEM TO BE SOLVED: To prevent a pattern from deteriorating in superposition accuracy, even if magnification corrections are made by a method wherein AA or AF measurements or a stage drive amount is corrected, based on a positional deviation due to a mask magnification correction mechanism. SOLUTION: A first in-plane mis-registration measurement (AA measurement) and a gap measurement (AF measurement) are carried out. The magnification of a pattern on a wafer is calculated based on the measurement result. If the measurement result indicates that a mask is required to be corrected for magnification, the magnification of the mask is changed through the magnification correction mechanism 3. By having the mask having corrected on magnification, a mask pattern is moved. The global AA measurement and the AF measurement are carried out again, for correcting the mask pattern for positional deviation. The drive pattern of a stage is determined from the measurement results, and a wafer is exposed to light. |
