发明名称 |
Chemical vapor deposition chamber |
摘要 |
An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, and a positioning assembly aligns the substrate to the receiving plate. In some embodiments, the invention may include a stem interconnected to the substrate, a heat limiting member disposed about the stem, and a shroud extending about the stem.
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申请公布号 |
US5882419(A) |
申请公布日期 |
1999.03.16 |
申请号 |
US19970939962 |
申请日期 |
1997.09.29 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SINHA, ASHOK;CHANG, MEI;PERLOV, ILYA;LITTAU, KARL;MORRISON, ALAN;LEI, LAWRENCE CHUNG-LAI |
分类号 |
C23C16/44;C23C16/455;C23C16/458;C23C16/46;H01L21/00;H01L21/68;H01L21/687;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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