| 摘要 |
PROBLEM TO BE SOLVED: To prevent a spin-coated SOG(Spin-On-Glass) film from being deposited thick in the vicinities of the corner parts of a metal wiring layer. SOLUTION: In a method of manufacturing a semiconductor device which forms a semiconductor element formation region and a scribed line region on a semiconductor substrate, forms a metal wiring layer 8 extending over the entire periphery of the semiconductor element formation region in such a way as to cover the end parts of a plurality of interlayer insulating films 3 to 5 and thereafter, and forms a SOG film 10 on the whole surface of the substrate 1 by a spin coating method when the layer 8 is formed, notch parts 14a and 14b are respectively formed in the corner parts of the layer 8 by etching. |
