| 摘要 |
PROBLEM TO BE SOLVED: To form an improved Al film as a conductor with improved controllability by introducing the gas of dimethylaluminumhydride and hydrogen gas into a space for forming a deposition film, and maintaining a surface temperature within a specific temperature range. SOLUTION: In a gas generation room 6 for generating a feed gas, bubbling is performed with respect to liquid-shaped dimethylaluminumhydride DMAH that is retained at a room temperature by hydrogen gas H2 as a carrier gas, a gas-shaped DMAH is generated, which is carried to a mixer 5. In this manner, the feed gas and the reaction gas are used, and the deposition film of Al is formed at the resolution temperature or higher of the feed gas, including Al as a substrate temperature and at 450 deg.C or less. The resistivity of the deposition film becomes 2.7 to 3.0μΩ.cm at room temperature for a film thickness of 400Å, which is nearly equal to that of Al bulk. The deposition film is continuous as well as flat. Also, a sufficiently fine film can be formed even in a thick film. Also, the reflectivity at a visible light wavelength region is nearly 80%, thus a thin film with improved surface flatness can be deposited.
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