发明名称 |
Method for treating via sidewalls with hydrogen plasma |
摘要 |
A method for treating via sidewalls comprising the steps of providing a substrate having a number of metallic wires already formed; depositing a liner oxide layer; depositing an organic spin-on-glass layer; and depositing a second oxide layer. The second oxide layer is planarized by a chemical-mechanical polishing method. Photolithographic and etching methods, employing oxygen plasma treatment as well as a wet etching removal method are used to form vias above the metallic layers. A hydrogen plasma treatment is performed for the via sidewalls to prevent the occurrence of out-gassing and to obtain superior electrical properties. A titanium/titanium nitride film is deposited, and aluminium or tungsten is deposited into the vias and to form aluminium or tungsten plugs, thus completing the manufacturing process according to this invention. A semiconductor device formned by this method is also described.
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申请公布号 |
US5883014(A) |
申请公布日期 |
1999.03.16 |
申请号 |
US19970968746 |
申请日期 |
1997.08.05 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN, SHIAW-RONG;LU, HORNG-BOR;LIN, JENN-TARNG |
分类号 |
H01L21/30;H01L21/316;H01L21/768;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/30 |
代理机构 |
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主权项 |
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地址 |
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