发明名称 |
Circuit device interconnection by direct writing of patterns therein |
摘要 |
An apparatus and method wherein conductive patterns are written in amorphous silicon or polysilicon deposited on an integrated circuit and used for interconnecting circuit elements contained therein. The substantially pure amorphous silicon or polysilicon is deposited onto an integrated circuit face at low temperature. A Focused Ion Beam deposition system deposits dopant atoms into the deposited pure silicon in a desired pattern. The dopant atoms are then activated by heat from a focused laser beam which adiabatically anneals the specifically doped areas of the deposited silicon. The resulting annealed doped areas of the silicon have low resistance suitable for circuit conductors. The surrounding undoped silicon remains a high resistance and a good insulator.
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申请公布号 |
US5883000(A) |
申请公布日期 |
1999.03.16 |
申请号 |
US19970924248 |
申请日期 |
1997.09.05 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
PASCH, NICHOLAS F. |
分类号 |
H01L21/3215;H01L21/768;H01L23/58;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/3215 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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