发明名称 Semiconductor device and protection method
摘要 A semiconductor device comprises a main switching element, an electric field detector and an on-voltage application unit. The main switching element includes a high-voltage main electrode, at least a low-voltage main electrode and at least a first gate electrode. The electric field detector has a MOS structure making conductive between the high-voltage main electrode and the first gate electrode in a path other than the main switching element in accordance with a predetermined electric field generated in the main switching element. The on-voltage application unit applies an on-voltage to the first gate electrode on the basis of the conductive state.
申请公布号 US5883402(A) 申请公布日期 1999.03.16
申请号 US19960744245 申请日期 1996.11.05
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OMURA, ICHIRO;OGURA, TSUNEO;MATSUSHITA, KENICHI;NINOMIYA, HIDEAKI
分类号 H01L27/02;(IPC1-7):H01L29/74 主分类号 H01L27/02
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