发明名称 |
Semiconductor device and protection method |
摘要 |
A semiconductor device comprises a main switching element, an electric field detector and an on-voltage application unit. The main switching element includes a high-voltage main electrode, at least a low-voltage main electrode and at least a first gate electrode. The electric field detector has a MOS structure making conductive between the high-voltage main electrode and the first gate electrode in a path other than the main switching element in accordance with a predetermined electric field generated in the main switching element. The on-voltage application unit applies an on-voltage to the first gate electrode on the basis of the conductive state.
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申请公布号 |
US5883402(A) |
申请公布日期 |
1999.03.16 |
申请号 |
US19960744245 |
申请日期 |
1996.11.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OMURA, ICHIRO;OGURA, TSUNEO;MATSUSHITA, KENICHI;NINOMIYA, HIDEAKI |
分类号 |
H01L27/02;(IPC1-7):H01L29/74 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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