| 摘要 |
PROBLEM TO BE SOLVED: To remove a photoresist in a short time under mild conditions, without corroding wiring materials or the like by a method wherein an inorganic substrate is cleaned with a cleaning solution which contains an oxidizing agent when photoresist is removed, and then to remove the photoresist by a removing solution. SOLUTION: In a photoresist-removing process, a photoresist is cleaned with a cleaning solution which contains an oxidizing agent, and then the photoresist is removed. It is most preferable that hydrogen peroxide be used as an oxidizing agent. An oxidizing agent to be used is varied in concentration according to its type, but generally 0.1 to 60 wt.% oxidizing agent is to be contained in a cleaning solution. It is preferable that phosphonic acid chelate be used, especially 1, 2-propanediamine tetramethylene phosphonic acid. |
