| 摘要 |
PROBLEM TO BE SOLVED: To improve the formation of a wiring formed of a tungsten polycide film. SOLUTION: A semiconductor device is provided with a tungsten polycide film as an electrode wiring, that comes into self-aligning contact with a source/ drain diffused region, which is formed on a semiconductor substrate and has a relatively large region (approximately 5μm square or more). The semiconductor device is formed by patterning the tungsten polycide film through an antireflection film by using a photoresist film as a mask. A second field oxide film 3 is formed on the source/drain diffused regions 9 and 10, an electrode wiring 13 is patterned on an island formed of a field oxide film 3 so as to expose the side wall part of the electrode wiring 13, and the sidewall part of the electrode wiring 13 is covered with an inter-layer insulating film 16 on the island. |
