Chemical vapor deposition of II/VI semiconductor material using triisopropylindium as a dopant

摘要

Triisopropylindium ((CH3)2CH)3In is used as an n-type dopant for II/VI semiconductor materials. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations in the range of the low 1015 cm-3 and does not exhibit an appreciable memory effect.