Semiconductor device including quantum wells or quantum wires and method of making semiconductor device

摘要

A method of fabricating a semiconductor device includes: forming multiatomic steps by MOCVD on a (110) semiconductor substrate inclined at an angle toward the [00+E,ovs 1+EE ] direction or the [1+E,ovs 11+EE ] direction; and growing at least one double heterostructure including a first compound semiconductor and a second compound semiconductor having a smaller band gap than the first compound semiconductor to form quantum wires of the second compound semiconductor at edges of the multiatomic steps. Multiatomic steps having step edges along the longitudinal direction of the wire have improved linearity, and thus, quantum wires can be fabricated with improved controllability.