| 摘要 |
PROBLEM TO BE SOLVED: To provide an SRAM(static random access memory) cell and the manufacture for reducing a memory area without degrading performance. SOLUTION: Two P type bulk silicon pull-down transistors 18 and 22 formed by two polysilicon layers, two N type active gate type pull-up TFTs(thin film transistors) 16 and 20, and two path gates 28 and 30, are mutually connected by four shared contacts 24 and 26. One polysilicon 1 of the polysilicon layers is turned to salicide and is provided with a gate electrode for the P type pull- down transistors 18 and 22, and the other polysilicon 2 is provided with a desired polysilicon 2 stringer disposed along the side part edge of the side part of the polysilicon 1 gate electrode and forms the channel area of the pull-up TFTs 16 and 20. |
