| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the hysteresis characteristic of a ferroelectric substrate is hardly deteriorated and which has high reliability under a high-humidity condition. SOLUTION: In a semiconductor device which is constituted as, for example, a two-transistor two-capacitor type ferroelectric memory M, a passivation film 42 composed of a compact silicon nitride film is formed so as to cover a ferromagnetic capacitor Cf through an interlayer film 38 and aluminum wiring 40. Consequently, the passivation film 42 composed of the silicon nitride film can prevent the intrusion of external water into the memory M. In addition, the upper electrode 36 of the capacitor Cf is formed in a two-layer structure by piling up IrO2 and Ir in this order. Therefore, the hydrogen which is generated during the film forming process or contained in the formed passivation film 42 can be prevented from reaching a ferroelectric layer 34 to some degree. Conseqeuntly, deterioration of the hysteresis characteristic of the capacitor Cf caused by hydrogencan be suppressed. |
