| 摘要 |
PROBLEM TO BE SOLVED: To enable a polishing simulation with high precision to be performed in a short time, wherein calculation precision is enhanced by increasing the mount of data processing (number of grids). SOLUTION: In planarizing the unevenness of a face of a substrate 11 by polishing, assuming that the shape of a polishing cloth 21 by a concavity 12 of the substrate 11 changes into a truncated cone shape Tc, the amount of the change is found, the distribution of polishing pressure is obtained based on the amount of the change in the polishing cloth, the level distribution of the substrate is obtained from the polishing amount distribution after a definite period of time, and then a formula for a substrate difference in level is provided from the level distribution of the substrate for the purpose of the polishing simulation. |
