发明名称 |
Semiconductor memory device and method for making the same |
摘要 |
A semiconductor memory device comprises a capacitor and a transistor formed on a main surface of a semiconductor substrate and a buried layer of high impurity concentration formed in the substrate, wherein the buried layer has the same conductivity type as that of the substrate and is formed shallow under the capacitor and deep under the transistor.
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申请公布号 |
US5883408(A) |
申请公布日期 |
1999.03.16 |
申请号 |
US19940296988 |
申请日期 |
1994.08.26 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TSUKAMOTO, KATSUHIRO |
分类号 |
H01L29/78;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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