| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element so designed that the temperature at semiconductor laser element's operation becomes minimum, when a heat sink of high thermal resistance is used. SOLUTION: Relating to the element, on a substrate 2, a clad layer 3, an active layer 4, a clad layer 5, current constriction layers 61 and 62 comprising a gap d1 are formed sequentially, a current is made to flow in the active layer 4, and a semiconductor laser element wherein an interval between end surfaces 10a and 10b reflecting the laser light coming out of a waveguide region 41 of such an active layer 4 corresponding to the distance d1 is resonator length L is placed on a heat sink 12 of high thermal resistance RM, for operation. Here, L= k.In(1/(Rf .Rr )<1/2> )/RM.(α+b)}<1/2> , where reflection factor of end surfaces 10a and 10b are Rf and Rr , respectively, waveguide loss in waveguide region 41 isα, constants, wherein relationship between current density J of current injected into active layer 4 and laser light's gain g is a.J-b, are a and b, and total thermal resistance of semiconductor laser element is k/L+RM (k is constant).
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