发明名称 METHOD AND APPARATUS FOR CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To minimize alignment shifts during transfer of photo mask pattern, when the surface of a semiconductor wafer is chemically and mechanically polished by equalizing the rotational speed of a polishing table with the rotational speed of a wafer carrier. SOLUTION: A wafer carrier presses a fixed wafer using a vacuum chuck or the like against a polishing table with a polishing pad placed on its surface, and holds the wafer there. The polishing table and the wafer carrier are turned together during polishing. Polishing agent (slurry) having specified chemical properties is applied to the contact plane between the wafer and the polishing pad. Further, an ammeter is placed between a motor for turning the wafer carrier and a power supply. At this time, the rotational speed of the polishing table is equalized with the rotational speed of the wafer carrier. As a result, a point on the wafer is polished regardless of its position on the wafer, while homogeneity and uniformity are maintained.
申请公布号 JPH1174236(A) 申请公布日期 1999.03.16
申请号 JP19970229346 申请日期 1997.08.26
申请人 LSI LOGIC CORP 发明人 MIZUNO HIROSHI;KINOSHITA OSAMU;MUROHASHI TETSUAKI;UENO AKIHISA;SAKUMA ETSUFUMI;COSTAS ANBERIADIS;IWAKI TATSUYA
分类号 B24B37/07;B24B37/10;H01L21/304 主分类号 B24B37/07
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