发明名称 |
Method for forming a hole in a semiconductor device |
摘要 |
Processes for forming pedestal holes in a substrate assembly are described. In particular, processes using a high density plasma to etch doped or undoped silicon oxide are described. For example, a fluorocarbon chemistry is employed for selective deposition of a spacer layer to form a vertical to less than vertical spacer within a contact hole. The contact hole is extended using the spacer and a subsequent etch to complete formation of a via. Alternatively, both spacer deposition and contact hole formation may be achieved in a single etch step.
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申请公布号 |
US5882535(A) |
申请公布日期 |
1999.03.16 |
申请号 |
US19970794355 |
申请日期 |
1997.02.04 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
STOCKS, RICHARD L.;DONOHOE, KEVIN G |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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