| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated device capable of improving the photoelectric conversion efficiency of its light receiving element, by removing one or whole opposed portion of its silicon layer to its electrode wiring through etching, and by projecting a light therethrough on the light receiving element. SOLUTION: In a silicon semiconductor substrate with an SOI structure, a Schottky junction 25 is formed between a first metallic electrode 26 and an N-type or intrinsic silicon layer 23. On the lateral side of the first metallic electrode 26, an N<+> -type region 28 and a second metallic electrode 27 connected with the region 28 are formed. The N-type or intrinsic silicon layer 23 is extenddely from the under portion of the first electrode 26 to the N<+> -type region 28 to bring them into an electrically connected state, one or whole opposed portion of the silicon layer 23 to the wiring of the electrode 26 is removed by an etching so that a light 29 can be projected on the depleted N-type or intrinsic silicon layer 23 from the opposite side to the Schottky junction 25 of a diode via an SiO2 layer 22. |
