| 摘要 |
PROBLEM TO BE SOLVED: To form a region that is strong against the damage of nitrogen oxide and to improve the reliability and life of a device by injecting nitrogen ions into source/drain regions at an inclined angle and thermally annealing the resultant structure. SOLUTION: A region 16 located below a gate becomes the channel of the transistor, and a source region 17 and a drain region 18 are located at both sides of the channel. Then, nitrogen is injected into the source and drain regions 17 and 18 at an inclination angle ofϕ. A material is thermally annealed succeeding implanting of ions. As a result of thermal annealing, the damage of ion implantation is eliminated, then, the implanted nitrogen are desorbed toward an interface and forms the protection layer of nitrogen oxide near the interface between a dielectric/source and a dielectric/drain. Finally, a contact to the source, gate, and drain is formed, thus completing a field effect device.
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