| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device, wherein a minute pattern can be formed at low cost by making use of conventional pattern forming techniques. SOLUTION: A semiconductor substrate 1 is inclined at an angleθto perform exposure of a photoresist 3, followed by development thereof in a conventional way to form a resist pattern 5a, which has a slit width of W and an inclination at the rate of the angleθ. Thereafter, etching is performed conventionally using the resist pattern 5a as a mask, thereby forming an etching pattern 6a having a slit width of W1 =W-t.sinθ.
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