| 摘要 |
PROBLEM TO BE SOLVED: To prevent a stress on a capacitor element and to inhibit the deterioration of the characteristics of the element by a method wherein the capacitor element on a substrate is covered with a first protective insulating film, a wiring layer on this insulating film is covered with a second protective insulating film and moreover, a wiring layer on the second insulating film is covered with a third protective insulating film. SOLUTION: An integrated circuit 4, an insulating layer 5 for element isolation use and an insulating film 6 are formed on a silicon substrate 1 and a lower electrode 7 of a capacitor element 10 is formed on the film 6. The element 10 is covered with a first protective insulating film 111 consisting of a silicon oxide film and a wiring layer 14, which penetrates this film 111 to connect with the element 10, is formed. A second protective insulating film 151, with which the layer 14 is covered and which consists of a silicon oxide film, is formed on a structure formed by this time. Moreover, a third protective insulating film 18, with which a wiring layer 17 penetrating this film 151 to connect with the layer 14 is covered and which is a silicon nitride film, is formed on a structure formed by this time. A stress (the expansion of the films and a shrinkage force) to act on the element 10 is reduced. |
