发明名称 Verfahren zum Herstellen eines Halbleiterwafers und Anlage hierfür
摘要 <p>An ingot is conveyed to a slicing machine by an ingot loader. Then, the ingot is cut into a wafer by the slicing machine. And, the cut wafer is conveyed to a peel-off portion and soaked in a warm water tank for a predetermined time so that the adhesive of the slice base can be heat softened, and then the slice base is hammered by a hammer rod so as to be peeled off from the wafer. Further, the wafer, from which the slice base has been peeled off, is conveyed to a wash-dry device, and washed and dried. The washed and dried wafer is conveyed to a surface inspecting device by a conveying device and judged a pass or fail to the wafer standard in the surface inspecting device. And, the passed wafer is conveyed to a chamfering device and the edge of the wafer is chamfered by the chamfering device. Then, the chamfered wafer is washed and dried by a wash-dry device, thereafter, conveyed to the storing part by the conveying device and stored.</p>
申请公布号 DE4400221(C2) 申请公布日期 1999.03.11
申请号 DE19944400221 申请日期 1994.01.05
申请人 TOKYO SEIMITSU CO. LTD., MITAKA, TOKIO/TOKYO, JP 发明人 NAGATSUKA, SHINJI, MITAKA, TOKIO/TOKYO, JP;KAGAMIDA, TAKESHI, MITAKA, TOKIO/TOKYO, JP
分类号 B28D5/00;H01L21/00;H01L21/677;(IPC1-7):H01L21/304;B08B1/00;H01L21/66;B24B9/00 主分类号 B28D5/00
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