发明名称 |
Verfahren zum Herstellen eines Halbleiterwafers und Anlage hierfür |
摘要 |
<p>An ingot is conveyed to a slicing machine by an ingot loader. Then, the ingot is cut into a wafer by the slicing machine. And, the cut wafer is conveyed to a peel-off portion and soaked in a warm water tank for a predetermined time so that the adhesive of the slice base can be heat softened, and then the slice base is hammered by a hammer rod so as to be peeled off from the wafer. Further, the wafer, from which the slice base has been peeled off, is conveyed to a wash-dry device, and washed and dried. The washed and dried wafer is conveyed to a surface inspecting device by a conveying device and judged a pass or fail to the wafer standard in the surface inspecting device. And, the passed wafer is conveyed to a chamfering device and the edge of the wafer is chamfered by the chamfering device. Then, the chamfered wafer is washed and dried by a wash-dry device, thereafter, conveyed to the storing part by the conveying device and stored.</p> |
申请公布号 |
DE4400221(C2) |
申请公布日期 |
1999.03.11 |
申请号 |
DE19944400221 |
申请日期 |
1994.01.05 |
申请人 |
TOKYO SEIMITSU CO. LTD., MITAKA, TOKIO/TOKYO, JP |
发明人 |
NAGATSUKA, SHINJI, MITAKA, TOKIO/TOKYO, JP;KAGAMIDA, TAKESHI, MITAKA, TOKIO/TOKYO, JP |
分类号 |
B28D5/00;H01L21/00;H01L21/677;(IPC1-7):H01L21/304;B08B1/00;H01L21/66;B24B9/00 |
主分类号 |
B28D5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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