Thermal treatment especially of semiconductor wafers

摘要

During thermal treatment of a substrate positioned parallel to a plate within a reaction chamber, the radiation in the space between the substrate and the plate is optically detected for determining the substrate temperature. An Independent claim is also included for a substrate thermal treatment apparatus comprising a reaction chamber (2), a heat source (3) and a plate (9) positioned parallel to the substrate (6), the plate (9) having an aperture (14) for exit of radiation from the space (15) between the substrate (6) and the plate (9). Preferred Feature: The substrate, the plate and the space form a hollow body radiator.