发明名称 METHOD FOR MAKING A SEMICONDUCTOR CHIP OR A WAFER WITH PROTECTIVE LAYER
摘要 The invention concerns a method for making a semiconductor chip or a wafer with a protective layer (4) covering at least the surface comprising the circuit. Said method consists in producing conductive protuberances (3) on the semiconductor substrate (1) contact surfaces (2), applying the protective layer (4), and removing the protective layer (4) parallel to the semiconductor substrate surface until the protuberances (3) are exposed for the metal coating.
申请公布号 WO9912200(A1) 申请公布日期 1999.03.11
申请号 WO1998DE02117 申请日期 1998.07.27
申请人 SIEMENS AKTIENGESELLSCHAFT;HOUDEAU, DETLEF;PUESCHNER, FRANK;NEU, ACHIM 发明人 HOUDEAU, DETLEF;PUESCHNER, FRANK;NEU, ACHIM
分类号 H01L21/31;H01L23/31 主分类号 H01L21/31
代理机构 代理人
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