发明名称 Integrierte Halbleiterschaltung
摘要 A plurality of different power source potentials are optionally selected in a semiconductor integrated circuit. First and second semiconductor segments (3) and (4) are both in the form of a number of rows which are separated from each other by spacings (14). Power source wires (6) and (7) for supplying potentials (V1) and (V2) are disposed above the second semiconductor regions (4). Cells are formed in different wells, and therefore, it is possible that different cells receive different power source potentials. Contacts (61) or (71) are made to the second semiconductor segments (4) so that the second semiconductor segments (4) are connected to the power source wire (6) or (7). Selection of and connection to one of the wires are attained in a slicing process.
申请公布号 DE4327290(C2) 申请公布日期 1999.03.11
申请号 DE19934327290 申请日期 1993.08.13
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 TANIGUCHI, HIDEKI, ITAMI, HYOGO, JP;SUZUKI, MASAHIRO, ITAMI, HYOGO, JP
分类号 H01L21/82;H01L21/822;H01L23/528;H01L27/02;H01L27/04;H01L27/118 主分类号 H01L21/82
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