发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor device having leads for power supply and leads for signal on the main surface of a semiconductor chip. When the intervals between the leads for signal and the semiconductor chip are made larger than those between the leads for power supply and chip, not only the fluctuation of the power supply potential can be prevented, but also the propagating speed of signals can be increased, because the stray capacitance provided to the leads for power supply can be made larger and the stray capacitance provided to the leads for signal can be made smaller. Therefore, the electric characteristic of the semiconductor device can be improved.
申请公布号 WO9912203(A1) 申请公布日期 1999.03.11
申请号 WO1997JP03020 申请日期 1997.08.29
申请人 HITACHI, LTD.;NAKAMURA, ATSUSHI;KATAGIRI, MITSUAKI;TSUBOSAKI, KUNIHIRO;NISHIMURA, ASAO;MASUDA, MASACHIKA 发明人 NAKAMURA, ATSUSHI;KATAGIRI, MITSUAKI;TSUBOSAKI, KUNIHIRO;NISHIMURA, ASAO;MASUDA, MASACHIKA
分类号 H01L23/495 主分类号 H01L23/495
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