| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device, which is capable of being restrained from increasing in chip size without deteriorating the high- potential generation function of a charge pump circuit. SOLUTION: A first shield layer 1, formed of first aluminum layer, is provided to a gate electrode layer 5 comprised in the MOS capacitor of a charge pump circuit. The first shield layer 1 is connected to a second GND wiring layer 2 formed of second aluminum layer. The potential of the GND wiring 2 is fixed at a grounding potential GND. By this setup, signal lines L1 , L2 ,..., Lk formed of second aluminum layer can be arranged on the charge pump circuit. |
