| 摘要 |
PROBLEM TO BE SOLVED: To obtain a structure which restrains the degradation of a capacitance film when a heat treatment is executed in an atmosphere containing hydrogen by a method wherein silicon nitide films are arranged on the inside face of a contact hole and between a capacitance element and an interlayer film as well as to the surface and the side face of the capacitance element. SOLUTION: A capacitance element is formed in such a way that its upper layer is formed as a first silicon nitride film 104, that its lower layer is formed as a silicon oxide layer 103, that it is separated from a semiconductor substrate 101 by a double-layer-structure interlayer insulating film and that it is connected electrically to the semiconductor substrate 101 via a contact hole 105. A second silicon nitride film 106 is arranged on the inside face of the contact hole 105, and a lower-part electrode 110 for the capacitance element is arranged on it so as to come into contact with the contact hole 105. A capacitance film 111 and an upper-part electrode film 112 are formed so as to cover the lower-part electrode 110. A third silicon nitride film 113 and a fourth silicon nitride film 114 are arranged respectively on the surface of the upper-part electrode 112 and on the side face of the capacitance film 111 and the upper-part electrode 112. |
