| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an epitaxial substrate provided with a gettering site at a low cost. SOLUTION: A silicon oxide film 2 is selectively formed by making the surface of a single-crystal silicon substrate 1 absorb a required quantity of oxygen. On the surface of the single-crystal silicon substrate exposed through an opening part between the silicon oxide film 2, an epitaxial layer 3a is selectively formed, and furthermore an epitaxial layer 3 is formed thereon. The silicon oxide film 2 acts as a gettering site, and an epitaxial substrate provided with the gettering site is manufactured. Next, the gettering site is obtained with a thin film of 1-2μm, without requiring a process other than epitaxial growth, and it is not necessary to control the oxygen concentration and doping amount, etc., for a substrate to be grown, so that the cost is reduced to almost two thirds that of a conventional epitaxial substrate.
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