发明名称 |
Device for heat treatment of objects and a method for producing a susceptor |
摘要 |
The present invention is directed to a device for heat treatment of objects. It comprises a susceptor for receiving an object in the form of a substrate and a gas mixture fed to the substrate for epitaxial growth of a crystal on said substrate by Chemical Vapor Deposition. The susceptor includes an inner wall and an outer, circumferential wall enclosing the inner wall at a distance therefrom. The inner wall defines a chamber for receiving the object. An enclosed space is formed between the inner and outer wall, and is filled with a powder. The powder is made of SiC, a group III nitride or alloys thereof. Also, for heating the susceptor and thereby also the object, a Rf-field radiator is provided surrounding the susceptor.
|
申请公布号 |
US5879462(A) |
申请公布日期 |
1999.03.09 |
申请号 |
US19950543628 |
申请日期 |
1995.10.16 |
申请人 |
ABB RESEARCH LTD.;OKMETIC LTD. |
发明人 |
KORDINA, OLLE;HERMANSSON, WILLY;TUOMINEN, MARKO |
分类号 |
C30B23/02;C30B25/10;(IPC1-7):C23C16/00;C03B25/00;H05B6/10;F27B5/04 |
主分类号 |
C30B23/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|