发明名称 Active pixel with a pinned photodiode
摘要 An active pixel for use in an imaging array and formed in a semiconductor substrate having a first conductivity type. The active pixel comprises: a pinned photodiode formed in the semiconductor substrate; a transfer well having a second conductivity type formed in the substrate, the transfer well being adjacent to the pinned photodiode; a transfer gate adjacent the transfer well, the transfer gate for controlling the flow of a signal charge from the pinned photodiode through the transfer well and under the transfer gate; and an output well adjacent the transfer gate for receiving the signal charge and routing the signal charge to output circuitry.
申请公布号 US5880495(A) 申请公布日期 1999.03.09
申请号 US19980004215 申请日期 1998.01.08
申请人 OMNIVISION TECHNOLOGIES, INC. 发明人 CHEN, DATONG
分类号 H01L27/146;(IPC1-7):H01L31/062 主分类号 H01L27/146
代理机构 代理人
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