发明名称 |
Active pixel with a pinned photodiode |
摘要 |
An active pixel for use in an imaging array and formed in a semiconductor substrate having a first conductivity type. The active pixel comprises: a pinned photodiode formed in the semiconductor substrate; a transfer well having a second conductivity type formed in the substrate, the transfer well being adjacent to the pinned photodiode; a transfer gate adjacent the transfer well, the transfer gate for controlling the flow of a signal charge from the pinned photodiode through the transfer well and under the transfer gate; and an output well adjacent the transfer gate for receiving the signal charge and routing the signal charge to output circuitry.
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申请公布号 |
US5880495(A) |
申请公布日期 |
1999.03.09 |
申请号 |
US19980004215 |
申请日期 |
1998.01.08 |
申请人 |
OMNIVISION TECHNOLOGIES, INC. |
发明人 |
CHEN, DATONG |
分类号 |
H01L27/146;(IPC1-7):H01L31/062 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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