发明名称 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a laminated light-emitting element in which electrodes can be easily manufactured, and with reduced number of steps. SOLUTION: Step 1): the light-emitting device has a laminated structure of a plurality of laminated light-emitting elements. The laminated structure includes slant surfaces tilted from the laminated surfaces as its part. Formed on the slant surfaces are electrodes for the light-emitting elements. Step 2) when the slant surfaces are formed, patterned masks are formed on the laminated surfaces and the laminated surfaces are subjected to an anisotropical etching process obliquely with respect to the laminated surfaces. Step 3): each mask is made of such material that satisfies a relationship 0.5<RS<RM<1.5, where RM denotes an etching rate of the mask and RS denotes an etching rate for the laminates semiconductor. 5) For a light-emitting element of a laminated structure using nitride semiconductor, an SiO2 film is used as the mask.
申请公布号 JPH1168160(A) 申请公布日期 1999.03.09
申请号 JP19970226383 申请日期 1997.08.22
申请人 FUJITSU LTD 发明人 HORINO KAZUHIKO
分类号 H01L33/08;H01L33/32;H01L33/36 主分类号 H01L33/08
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