| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-luminous efficiency, high-density semiconductor element and a semiconductor element array which can be manufactured on a mass production basis with low cost and high yield. SOLUTION: An LED array includes an n-type GaAs substrate 101, an n-type GaAs buffer layer 102, an n-type Alz Ga1-z As layer 103, an n-type Aly Ga1-y As layer 104, an semi-insulating Alx Ga1-x As layer 105, and a semi-insulating GaAs layer 106, formed sequentially on the substrate. Energy band gaps of the Alz Ga1-z As layer 103 and Alx Ga1-x As layer 105 are set to be at least larger than the energy band gap of the Aly Ga<1-y> As layer 104, a selectively diffused p-n junction having a diffusion front is formed within the semiconductor layer of the small energy band gap which is disposed between the semiconductor layers of the large energy band gaps, and an uppermost surface for the formation of ohmic contact is a p-type GaAs region formed by diffusing the semi- insulating GaAs layer with Zn. |
