| 摘要 |
Method and circuitry for power control in integrated circuits using field effect transistor (FET) technology are disclosed. According to the present invention, for each circuit block that is biased by the power supply voltage a dedicated level shifter is inserted between the block and the power supply. In one embodiment, a switch is also coupled in parallel to the level shifter. The switch is closed when a low external power supply voltage is applied, and opened when a higher power supply voltage is applied. A second embodiment removes the switch and adds a bias generator that supplies a bias voltage to each level shifter.
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